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1

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

Chih-Tang Sah, Noyce, R.N., Shockley, W.

Journal:

Proceedings of the IRE

Year:

1957

Language:

english

File:

PDF, 3.00 MB

english, 1957

2

Evolution of the MOS transistor-from conception to VLSI

Journal:

Proceedings of the IEEE

Year:

1988

Language:

english

File:

PDF, 5.13 MB

english, 1988

3

A new method for the determination of dopant and trap concentration profiles in semiconductors

Ming-Fu Li, Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 812 KB

english, 1982

4

Temperature dependence of surface recombination current in MOS transistors

Yih Wang, Neugroschel, A., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 248 KB

english, 2001

5

Evaluation of surface-potential-based bulk-charge compact MOS transistor model

Jie, B.B., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 466 KB

english, 2005

6

Energy and momentum conservation during energetic-carrier generation and recombination in silicon

Lu, Yi, Sah, Chih-Tang

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 387 KB

english, 1995

7

[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - DCIV diagnosis for submicron MOS transistor design, process, reliability and manufacturing

Year:

2001

Language:

english

File:

PDF, 1.07 MB

english, 2001

8

[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Physics-based exact analytical drain current equation and optimized compact model for long channel MOS transistors

Bin B. Jie,, Chih-Tang Sah,

Year:

2004

Language:

english

File:

PDF, 1.64 MB

english, 2004

9

New techniques of capacitance-voltage measurements of semiconductor junctions

Ming-Fu Li, Chih-Tang Sah

Journal:

Solid-State Electronics

Year:

1982

Language:

english

File:

PDF, 453 KB

english, 1982

10

Generation and annealing of interface traps on oxidized silicon irradiated by keV electrons

Wallace Wan-Li Lin, Chih-Tang Sah

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 1002 KB

english, 1988

11

Effects of hydrogen chloride on the annealing kinetics of interface and oxide traps in oxidized silicon stressed by avalanche electron injection

Wallace Wan-Li Lin, Chih-Tang Sah

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 599 KB

english, 1988

12

Threshold voltage models of the narrow-gate effect in micron and submicron MOSFETs

Steve Shao-Shiun Chung, Chih-Tang Sah

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 1.52 MB

english, 1988

13

Temperature dependences of surface recombination DC current–voltage characteristics in MOS structures

Zuhui Chen, Bin B. Jie, Chih-Tang Sah

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 796 KB

english, 2006

14

EXTENSION OF THE McNUTT-SAH METHOD FOR MEASURING THIN OXIDE THICKNESSES OF MOS DEVICES

Steven V. Walstra, Chih-Tang Sah

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 160 KB

english, 1998

15

Current-acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress

Neugroschel, A., Chih-Tang Sah, Carroll, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 474 KB

english, 1995

16

Direct-current measurements of oxide and interface traps on oxidized silicon

Neugroschel, A., Chih-Tang Sah, Han, K.M., Carroll, M.S., Nishida, T., Kavalieros, J.T., Yi Lu

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 680 KB

english, 1995

17

Separation of interface and nonuniform oxide traps by the DC current-voltage method

Kavalieros, J.T., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 620 KB

english, 1996

18

Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress

Neugroschel, A., Chih-Tang Sah, Carroll, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 590 KB

english, 1996

19

Degradation of silicon bipolar junction transistors at high forward current densities

Carroll, M.S., Neugroschel, A., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 816 KB

english, 1997

20

Base current relaxation transient in reverse emitter-base bias stressed silicon bipolar junction transistors

Neugroschel, A., Chih-Tang Sah, Carroll, M.S., Pfaff, K.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 338 KB

english, 1997

21

Thin oxide thickness extrapolation from capacitance-voltage measurements

Walstra, S.V., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 244 KB

english, 1997

22

Reduction of interface traps in p-channel MOS transistors during channel-hot-hole stress

Han, K.M., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 99 KB

english, 1998

23

Low frequency conductance voltage analysis of Si/GexSi 1-x/Si heterojunction bipolar transistors

Neugroschel, A., Guoxin Li, Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 261 KB

english, 2000

24

Analysis of bipolar junction transistors with a Gaussian base-dopant impurity-concentration profile

Guoxin Li, Neugroschel, A., Chih-Tang Sah, Hemmenway, D., Rivoli, T., Maddux, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 140 KB

english, 2001

25

Effect of surface recombination and channel on P-N junction and transistor characteristics

Journal:

IRE Transactions on Electron Devices

Year:

1962

Language:

english

File:

PDF, 1.39 MB

english, 1962

26

The spatial variation of the charged gold concentration in silicon p-n step junctions

Schroder, D.K., Tasch, A.F., Jr., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1968

Language:

english

File:

PDF, 636 KB

english, 1968

27

Theory and experiments of low-frequency generation-recombination noise in MOS transistors

Yau, L.D., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1969

Language:

english

File:

PDF, 704 KB

english, 1969

28

Application of the distributed equilibrium equivalent circuit model to semiconductor junctions

Forbes, L., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1969

Language:

english

File:

PDF, 537 KB

english, 1969

29

Theory and experiments on surface 1/f noise

Horng-Sen Fu, Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1972

Language:

english

File:

PDF, 1.20 MB

english, 1972

30

Transient response of MOS capacitors under localized photoexcitation

Chih-Tang Sah, Horng-Sen Fu

Journal:

IEEE Transactions on Electron Devices

Year:

1974

Language:

english

File:

PDF, 817 KB

english, 1974

31

Application of the equivalent circuit model for semiconductors to the study of Au-doped p-n junctions under forward bias

Maes, H.E., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1976

Language:

english

File:

PDF, 1.07 MB

english, 1976

32

Concentration profiles of recombination centers in semiconductor junctions evaluated from capacitance transients

Chih-Tang Sah, Neugroschel, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1976

Language:

english

File:

PDF, 658 KB

english, 1976

33

Detection of recombination centers in solar cells from junction capacitance transients

Journal:

IEEE Transactions on Electron Devices

Year:

1977

Language:

english

File:

PDF, 1.14 MB

english, 1977

34

Fundamental electronic mechanisms limiting the performance of solar cells

Lindholm, F.A., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1977

Language:

english

File:

PDF, 823 KB

english, 1977

35

A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

Lindholm, F.A., Neugroschel, A., Chih-Tang Sah, Godlewski, M.P., Brandhorst, H.W., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1977

Language:

english

File:

PDF, 1.09 MB

english, 1977

36

Carrier generation, recombination, trapping, and transport in semiconductors with position-dependent composition

Chih-Tang Sah, Lindholm, F.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1977

Language:

english

File:

PDF, 648 KB

english, 1977

37

A method for determining the emitter and base lifetimes in p-n junction diodes

Neugroschel, A., Lindholm, F.A., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1977

Language:

english

File:

PDF, 1.18 MB

english, 1977

38

Hot electrons in short-gate charge-coupled devices

Hess, K., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 729 KB

english, 1978

39

Experimental and theoretical studies of I—V characteristics of zinc-doped silicon p-n junctions using the exact DC circuit model

Chan, P.C.H., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1979

Language:

english

File:

PDF, 460 KB

english, 1979

40

Exact equivalent circuit model for steady-state characterization of semiconductor devices with multiple-energy-level recombination centers

Chan, P.C.H., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1979

Language:

english

File:

PDF, 998 KB

english, 1979

41

Effect of zinc impurity on silicon solar-cell efficiency

Chih-Tang Sah, Phillip Ching Ho Chan, Chi-Kuo Wang, Sah, R.L-Y., Yamakawa, K.A., Lutwack, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1981

Language:

english

File:

PDF, 1.19 MB

english, 1981

42

Effect of thickness on silicon solar cell efficiency

Chih-Tang Sah, Yamakawa, K.A., Lutwack, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 766 KB

english, 1982

43

Two-dimensional numerical analysis of the narrow gate effect in MOSFET

Chao-Ren Ji, Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.41 MB

english, 1983

44

Analysis of the narrow gate effect in submicrometer MOSFET's

Chao-Ren Ji, Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 645 KB

english, 1983

45

A physically based mobility model for MOSFET numerical simulation

Nishida, T., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.15 MB

english, 1987

46

A subthreshold model of the narrow-gate effect in MOSFET's

Chung, S.S.-S., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 972 KB

english, 1987

47

Tunnel DCIV extraction of dopant-impurity concentration, oxide thickness, and length in the channel and extension regions of ultrathin gate-oxide MOS transistors

Jie, B.B., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 471 KB

english, 2005

48

Accuracy of Surface-Potential-Based Long–Wide-Channel Thick-Base MOS Transistor Models

Jie, B.B., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 502 KB

english, 2007

49

Gate tunneling currents in ultrathin oxide metalâoxideâsilicon transistors

Cai, Jin, Sah, Chih-Tang

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 566 KB

english, 2001

50

Deactivation of the boron acceptor in silicon by hydrogen

Journal:

Applied Physics Letters

Year:

1983

Language:

english

File:

PDF, 449 KB

english, 1983